MJD122 d-pak(to-252) npn plastic encapsulate tra n sistors 1.base 2.collector 3.emitter 1 2 3 weitron http://www .weitron.com.tw 1/ 4 13-apr-07 lea d( p b) features: - f r ee p b absolute maximum ratings (t a =25?c) collector-base voltage collector-emitter voltage emitter-base voltage symbol value unit rating t j p d 100 100 5.0 5.0 20.0 1.5 collector power dissipation i c ?c ?c w storage temperature range t stg +150 -55 to +150 collector current v cbo v ceo v ebo a v v v junction temperature * high dc current gain * electrically similar to popular tip122 * built-in a damper diode at e-c @t c =25c @t a =25c
MJD122 on characteristics dc current gain v ce =4v, i c =4a v ce =4v, i c =8a collector-emitter saturation voltage i c =4a, i b =16ma i c =8a, i b =80ma i c =8a, i b =80ma h fe(1) 1000 - 12000 - h fe(2) 100 - - v ce(sat) - - 2.0 4.0 v output capacitance v cb =10v, i e =0, f=0.1mhz - 200 - pf weitron http://www .weitron.com.tw 2/ 4 13-apr-07 c ob base-emitter saturation voltage v be(sat) - - 4.5 v v ce =4a, i c =4a base-emitter on voltage v (on) - - 2.8 v symbol parameter min typ max unit electrical characteristics(t a =25?c unless otherwise noted) collector-emitter breakdown voltage i c =30ma collector-base breakdown voltage i c =1ma emitter-base breakdown voltage i e =3ma collector cuto? current v cb =100v i cbo bv ebo bv ceo bv cbo 100 100 5.0 - - - - - 10 - - - v v v a collector emitter cuto? current v ce =50v i ceo - 10 - a emitter cuto? current v eb =5.0v i ebo - 2 - ma
MJD122 weitron http://www .weitron.com.tw 3/4 13-apr-07 t ypical characteristics
to-252 outline dimensions MJD122 weitron http://www.weitron.com.tw 4/4 13-apr-07 u n i t : m m dim min max 6.40 6.80 9.00 10.00 0.50 0.80 - 2.30 2.20 2.50 0.45 0.55 1.00 1.60 5.40 5.80 0.30 0.64 0.70 1.70 0.90 1.50 to-252 e g a h j b m d k c l 1 2 3 4 a b c d e g h j k l m
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